BD645 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
BD645 Datasheet PDF : 2 Pages
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Static characteristics (Tamb - 25 °C)
BD643
BD045
BO 647
BD649
BD643 BD64S BD847 BD649
Collector cutoff current
(VCB " VcBmax)
(VcB - VcBmax; Tamb = 100°C)
Collector cutoff current
(VCE * 0.5 Vc£maX)
Emitter cutoff current
(VEB = 5V)
Collector-emitter breakdown
voltage (/c = 1 00 mAI'l
Collector-base breakdown
voltage (/e = 5 mA)
Emitter-base breakdown
voltage (4 =» 2 mA)
^CBO
<0.2
/CBO
<2
1CEO
<O.S
/EBO
<B
VUWCEO >4S
V(Bn)CBO >4S
V,BR)EBO >5
<0.2
<2
<0.5
<5
>60
>eo
>5
<0.2
<2
<0.5
<B
<80
>80
>6
<0.2 mA
<2
mA
<0.5 mA
<5
mA
>100 V
>100 V
>5
V
DC current gain
(/c- 0.5 A. VCE -3V)
hfE
l/C = 3A,VCE = 3V)
hre
(/C = 6A,VCE = 3V)
hK
Base-emitter forward voltage
(/c = 3A,VCE = 3V)
VBE
Collector-emitter saturation
voltage'
(/c-3A,/B = 12mA)
VCEM,
Forward voltage of the protective
diode at 4 = 3A
VF
1600 1500 1500 1500 _
>760 >750 >750 >760 -
750
750
750
750
-
<2.5 <2.5 <2.5 <2.5 V
<2
<2
<2
<2
V
1.8
1.8
1.8
1.8
V
Dynamic characteristics (famb " 25 °C)
Transition frequency
(/c = 3A,VCE = 3V,f=1MHz) (V
Cutoff frequency in common
emitter configuration
(/c = 3A;VCE = 3V)
U
7(>1)
60
7{>1)
60
7{>1) 7(>1) MHz
60
60
kHz
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