BD683 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
BD683 Datasheet PDF : 2 Pages
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NPN BD683
PNP BD684
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICBO
Collector cut-off current
IE=0, VcB=VCEOMAX=120V
-
IE=0 , VCB= 1/2VCBOMAX= 70V,T,= 15CTC
-
-
-
0,2
mA
1
ICEO
Collector cut-off current
l8=0,VcE=1/2VCEOMAX=60V
-
-
0,2 mA
IEBO
Emitter cut-offcurrent
lc=0, VEB=5 V
--
5
mA
VcE(SAT)
Collector-Emitter saturation
Voltage
lc=1.5A, !B=6mA
-
-
2,5
V
VcE=3 V, lc=500 mA
- 2200 -
HFE
DC Current Gain
VCE=3 V, lc=1 ,5 A
VCE=3 V, lc=4 A
750 -
-
- 1500 -
VBE
Base-Emitter Voltage(1&2) VCE=3V, IC=1,5A
-
-
2,5
V
h,e
Small signal current gain
VCE=3V, lc=1,5A, f=1 MHz
10
-
-
fhfe
Ut-off frequency
VCE=3V, IC=1,5A
-
60
- kHz
VF
Diode forward voltage
IF=1,5A
'(SB)
Second-breakdown collector VcE=50 V, tp= 20ms,non rep., without
current
heatsink
0,8 -
-
A
ton
Turn-on time
toff
Turn-off time
I —1 ^A L — L *— fimA V,^.— ^OV
- 0,8
- 4,5
2
8
MS
1. Measured under pulse conditions :tP <300us, 8 <2%.
2. VBE decreases by about 3,6 mV/K with increasing temperature.
MECHANICAL DATA CASE TO-126
DIMENSIONS
mm
inches
min
max
min
max
A
7.4
7.8
0.295 0.307
B
10.5
10.8 0.413 0.425
C
2.4
2.7
0.094 0.106
D
0.7
0.9
0.027 0.035
E
2.2 typ.
0.087 typ.
F
0.49
0.75 0.019 0.029
G
4.4 typ.
0.1 73 typ.
H
2.54 typ.
0.100 typ.
L
15.7 typ.
0.61 8 typ.
M
1.2 typ.
0.047 typ.
N
3.8 typ.
0.1 49 typ.
P
3.0
3.2
0.118 0.126
Pin 1 :
Pin 2:
Pin 3:
Emitter
Collector
Base
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