TRUTH TABLE (X = Don’t Care)
E
G
W
Mode
H
X
X
Not Selected
L
H
H Output Disabled
L
L
H
Read
L
X
L
Write
VDD Current
ISB1, ISB2
IDDA
IDDA
IDDA
Output
High–Z
High–Z
Dout
High–Z
Cycle
—
—
Read Cycle
Write Cycle
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage
VDD
– 0.5 to + 4.6
V
Voltage Relative to VSS for Any Pin Except Vin, Vout – 0.5 to VDD + 0.5 V
VDD
Output Current
Iout
± 30
mA
Power Dissipation
PD
0.6
W
Temperature Under Bias
Tbias
– 10 to + 85
°C
Operating Temperature
TA
0 to + 70
°C
Storage Temperature — Plastic
Tstg
– 55 to + 125
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid appli-
cation of any voltage higher than maximum
rated voltages to these high–impedance cir-
cuits.
This BiCMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V +10%, – 5% TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Supply Voltage (Operating Voltage Range)
Input High Voltage
VDD
3.135
3.3
VIH
2.2
—
Input Low Voltage
VIL
– 0.5*
—
* VIL (min) = –0.5 V dc; VIL (min) = –2.0 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA.
** VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 2 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA.
DC CHARACTERISTICS
Parameter
Input Leakage Current (All Inputs, Vin = 0 to VDD)
Output Leakage Current (E = VIH, Vout = 0 to VDD)
Output Low Voltage (IOL = + 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
Symbol
Min
Ilkg(I)
—
Ilkg(O)
—
VOL
—
VOH
2.4
Max
Unit
3.6
V
VDD + 0.3** V
0.8
V
Max
Unit
± 1.0
µA
± 1.0
µA
0.4
V
—
V
MCM6929A
2
MOTOROLA FAST SRAM