Plastic-Encapsulate Transistors
BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
BC846AW
BC847AW
BC848AW
Collector-emitter breakdown voltage
BC846AW
BC847AW
BC848AW
Emitter-base breakdown voltage
BC846AW
BC847AW
BC848AW
Collector Cutoff Current
VCBO
IC= 10µA, IE=0
VCEO
IC= 10mA, IB=0
VEBO
ICBO
IE= 1 µA, IC=0
VCB=30V
DC current gain
BC846AW,BC846BW
BC847AW,BC847BW,BC847CW
BC848AW,BC848BW,BC848CW
VCE= 5V, IC= 10µA
hFE
VCE= 5V, IC= 2mA
Collector-emitter saturation voltage
VCE(sat)
IC=10mA, IB=0. 5mA
IC=100mA, IB= 5mA
Min
80
50
30
65
45
30
6
6
5
110
200
420
Ttp. Max Unit
V
V
V
15 nA
90
150
270
220
450
800
0.25
0.6 V
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
VBE(sat)
IC=10mA, IB=0. 5mA
IC=100mA, IB= 5mA
0.7
0.9
V
VCE= 5V, IC= 2mA
580
660 700
VBE(on) VCE= 5V, IC= 10mA
770 mV
VCE= 5 V, IC= 10mA
fT
f=100MHz
100
MHz
Collector output capacitance
Noise figure
BC846AW,BC846BW
BC847AW,BC847BW,BC847CW
BC848AW,BC848BW,BC848CW
Cob
VCB=10V,f=1MHz
VCE=5V,Ic=0.2mA,
NF f=1KHz,RS=2KΩ BW=200Hz
4.5 pF
10 dB
4
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