STD6NF10 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STD6NF10
STMicroelectronics
STD6NF10 Datasheet PDF : 9 Pages
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STD6NF10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 50 V
ID = 3 A
6
ns
tr
Rise Time
RG = 4.7 Ω
VGS = 10 V
10
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
VDD = 80 V ID = 6 A VGS= 10 V
10
nC
Qgs
Gate-Source Charge
2.5
nC
Qgd
Gate-Drain Charge
4
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
td(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 50 V
ID = 6 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
Vclamp = 80 V
ID = 6 A
RG = 4.7Ω,
VGS = 10 V
(Inductive Load, Figure 5)
Min.
Typ.
20
3
19
8
15
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 6 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 6 A
di/dt = 100A/µs
VDD = 10 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
70
175
5
Max.
6
24
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/9
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