KTA2014 View Datasheet(PDF) - Galaxy Semi-Conductor

Part Name

Description

MFG CO.

KTA2014

PNP Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

Production specification

PNP Silicon Epitaxial Planar Transistor

KTA2014

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-0.1mA,IE=0

-50

Collector-emitter breakdown

voltage

V(BR)CEO

IC=-1mA,IB=0

-50

Emitter-base breakdown voltage

V(BR)EBO IE=-0.1mA,IC=0

-5

Collector cut-off current

ICBO

VCB=-50V,IE=0

Emitter cut-off current

IEBO

VEB=-5V,IC=0

DC current gain

hFE

VCE=-6V,IC=-2mA

70

Collector-emitter saturation voltage VCE(sat)

IC=-100mA, IB=-10mA

Transition frequency

fT

VCE=-10V, IC= -1mA

80

Collector output capacitance

Cob

Noise figure

NF

CLASSIFICANTION OF hFE

VCB=-10V,IE=0,f=1MHz

VCE=6V,IC=0.1mA,f=1K

Hz,Rg=10KΩ

V

V

V

-0.1 μA

-0.1 μA

400

-0.1 -0.3 V

MHz

4

7

pF

1.0 10 dB

Rank

O

Y

G

Range

70-140

120-240

200-240

marking

SO

SY

SG

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

F047

Rev.A

www.gmicroelec.com

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