PSB51/14 View Datasheet(PDF) - Powersem GmbH
Part Name
Description
MFG CO.
PSB51/14 Datasheet PDF : 2 Pages
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PSB 51
200
[A]
150
100
50
Tvj = 150°C
IF
Tvj = 25°C
0
0.5 1 1.5 2
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
I-I-FF-S(-MO-V-)
1.6
IFSM (A)
TVJ=45°C TVJ=150°C
750
675
1.4
1.2
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
100
101 t[ms] 102
103
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
4
10
A2s
TVJ=45°C
3
10
TVJ=150°C
2
10
1
2
46
10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
200
[W] PSB 51
175
150
125
85
TC
0.3 0.17 = RTHCA [K/W] 90
0.42
95
100
105
0.67
110
100
75
50
25
PVTOT
0
10
IFAVM
1.17
DC
sin.180°
rec.120°
rec.60°
rec.30°
2.67
30
50 0
50
[A] Tamb
100
115
120
125
130
135
140
145
°C
150
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient
temperature
60
[A]
50
40
DC
sin.180°
rec.120°
rec.60°
rec.30°
30
20
10
IdAV
0
50 100 150 200
TC(°C)
Fig.5 Maximum forward current
at case temperature
K/W
2
1
Z thJK
Z thJC
Z th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
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