KSC5504D View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
MFG CO.
KSC5504D Datasheet PDF : 10 Pages
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Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICES
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
Cib
Cob
fT
VF
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Current Gain Bandwidth Product
Diode Forward Voltage
IC=1mA, IE=0
IC=5mA, IB=0
IE=500µA, IC=0
VCES=1200V,
VBE=0
TC=25°C
TC=125°C
VCE=600V, IB=0 TC=25°C
TC=125°C
VEB=12V, IC=0
TC=25°C
VCE=1V, IC=0.5A TC=25°C
TC=125°C
VCE=1V, IC=2A
TC=25°C
TC=125°C
VCE=2.5V, IC=1A TC=25°C
TC=125°C
IC=0.5A,
IB=0.05A
TC=25°C
TC=125°C
IC=1A, IB=0.2A
TC=25°C
TC=125°C
IC=2A, IB=0.4A
TC=25°C
TC=125°C
IC=0.8A,
IB=0.08A
TC=25°C
TC=125°C
IC=2A, IB=0.4A
TC=25°C
TC=125°C
VEB=10V, IC=0, f=1MHz
VCB=10V, IE=0, f=1MHz
IC=0.5A,VCE=10V
IF=1A
TC=25°C
TC=125°C
IF=2A
TC=25°C
TC=125°C
Min.
1200
600
12
15
10
4
3
12
8
Typ.
1350
750
13.7
20
13
6
4.1
18
10
0.28
0.5
0.18
0.3
0.5
2.0
0.77
0.60
0.85
0.70
600
75
11
0.83
0.7
0.88
0.8
Max.
100
500
100
500
10
35
30
0.6
1.0
0.5
0.75
1.5
3.0
1.0
0.9
1.2
1.0
750
100
1.3
1.5
Units
V
V
V
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
pF
pF
MHz
V
V
V
V
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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