BUT32V(1997) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
BUT32V Datasheet PDF : 7 Pages
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BUT32V
THERMAL DATA
Rthj-ca se Thermal Resistance Ju nction-case
Rthc-h Thermal Resistance Case-heatsin k With Conductive
Grease Applied
Max
Max
0.5
0.05
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICER Collecto r Cu t-of f
Current (RBE = 5 Ω)
VCE = VCEV
VCE = VCEV
Tj = 100 oC
ICEV Collecto r Cu t-of f
Current (VBE = -5)
VCE = VCEV
VCE = VCEV
Tj = 100 oC
IEBO Emitter Cut-off Current
(IC = 0)
VCEO(SUS) * Collecto r-Emitter
Sustaining Voltage
hFE∗ DC Current Gain
VCE(sat)∗ Collecto r-Emitter
Saturation Voltage
VEB = 5 V
IC = 0.2 A L = 25 mH
Vclamp = 300 V
IC = 40 A VCE = 5 V
IC = 40 A IB = 4 A
IC = 40 A IB = 4 A Tj = 100 oC
VBE( sat)∗ Base-Emitter
Saturation Voltage
IC = 40 A IB = 4 A
IC = 40 A IB = 4 A Tj = 100 oC
diC/dt Rate of Rise of
On-state Collector
VCC = 3 00 V RC = 0
IB1 = 6 A Tj = 100 oC
tp = 3 µs
VCE (3 µs) Collecto r-Emitter
Dynamic Voltage
VCC = 300 V RC = 6 .2 Ω
IB1 = 6 A Tj = 1 00 oC
VCE(5 µs) Collecto r-Emitter
Dynamic Voltage
VCC = 300 V RC = 6 .2 Ω
IB1 = 6 A Tj = 1 00 oC
ts
Storage Time
tf
Fall Time
tc
Cross-over Time
IC = 40 A VCC = 250 V
VBB = -5 V RBB = 0.6 Ω
Vclamp = 300 V IB1 = 4 A
L = 0. 3 mH Tj = 100 oC
VCEW Maximu m Collector
ICWoff = 60 A IB1 = 4 A
Emitter Voltage
VBB = -5 V VCC = 5 0 V
With ou t Snubber
L = 42 µH RBB = 0.6 Ω
Tj = 1 25 oC
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ.
300
16
0.6
1.2
1.12
1.1
120 180
3
1.8
1.9
0.12
0.35
300
Max.
1
5
1
4
1
0. 9
1. 9
1. 3
1. 3
6
3
3
0. 4
0. 7
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
A/µs
V
V
µs
µs
µs
V
2/7
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