IRFM350
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ. Max. Unit
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
Static Drain – Source On–State
RDS(on) Resistance 2
VGS(th) Gate Threshold Voltage
gfs
Forward Transconductance 2
VGS = 10V
VGS = 10V
VDS = VGS
VDS ³ 15V
ID = 9A
ID = 14A
ID = 250mA
IDS = 9A
IDSS Zero Gate Voltage Drain Current
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
IGSS Forward Gate – Source Leakage
VGS = 20V
IGSS Reverse Gate – Source Leakage
VGS = –20V
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
CDC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain – Case Capacitance
VGS = 0
VDS = 25V
f = 1MHz
Qg
Total Gate Charge
VGS = 10V
Qgs Gate – Source Charge
ID = 14A
Qgd Gate – Drain (“Miller”) Charge
VDS = 0.5BVDSS
td(on)
tr
td(off)
tf
Turn– On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VDD = 200V
ID = 14A
RG = 2.35W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current 1
VSD Diode Forward Voltage 2
trr
Reverse Recovery Time 2
Qrr
Reverse Recovery Charge 2
IS = 14A
TJ = 25°C
VGS = 0
IF = 14A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
ton
Forward Turn–On Time
PACKAGE CHARACTERISTICS
LD
Internal Drain Inductance Measured from 6mm down drain lead to centre of die
LS
Internal Source Inductance Measured from 6mm down source lead to source bond pad
Notes
1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature
2) Pulse Test: Pulse Width £ 300ms, d £ 2%.
400
V
0.46
V/°C
0.315 W
0.415
2
4
V
6
S((WW)
25
mA
250
100
nA
–100
2600
660
pF
250
12
52
110
5
18
nC
25
65
35
190
ns
170
130
14
A
56
1.7
V
1200 ns
11
mC
Negligible
8.7
nH
8.7
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 05/00