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2N6253 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
MFG CO.
2N6253
Iscsemi
Inchange Semiconductor 
2N6253 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Wide safe operating area
·High dissipation capability
APPLICATIONS
·Series and shunt regulators
·High fidelity amplifiers
·Power switching circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Product Specification
2N6253
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
55
45
5
15
7
115
200
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.5
UNIT
/W

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