2SC2658 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
2SC2658 Datasheet PDF : 2 Pages
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^s.mi-Conducto'i Lpioducti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC2658
DESCRIPTION
• Collector-Emitter Sustaining Voltage- :,
: VCECKSUSP 500V (Min)
• High Switching Speed
APPLICATIONS
• Designed for high speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
8
V
Ic
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@TC=25'C
T]
Junction Temperature
Tstg
Storage Temperature Range
10
A
90
W
150
'C
-65-150 •c
PIM 1. BASE
i. BETTER
3, COLLECT OR (CASE)
TO-3 package
IK
V-
SdOl
Mini
DIM MIN I MAX
A
3300
B 25.30 26.67
C
7.80 8 5 G
D 0.90 1 10
E
t.40 1 60
ij
1092
H
546
K ".'-.10 LH50_
L 1675 17 <}$
H 19*3 1962
0
400 420
U 3000 h 30 20
V
430 450
N.I Stfmi-Coiidiietors reserves the right to change test conditions, parameter limits and package ilimensions without
notkv. InfDi'ination furnished hy N.I Semi-C'onductors is believed to he hold accurate and reliable at the time ofgoii)
to press. I Kme\er, NJ Seini-C'ondiictors assumes no responsibility for an\s or omissions discovered in its use.
N.I Semi-t'onduelors encinira.ues customers In verily that datasheets are current helbre placing orders.
Qualify Semi-Conductors
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