2N5661 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
2N5661 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5660 2N5661
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2N5660
2N5661
IC=10mA ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10μA ; IC=0
VCEsat-1 Collector-emitter saturation voltage IC=1A; IB=0.1A
VCEsat-2 Collector-emitter saturation voltage IC=2A; IB=0.4A
VBEsat-1 Base-emitter saturation voltage
IC=1A ;IB=0.1A
VBEsat-2 Base-emitter saturation voltage
IC=2A; IB=0.4A
2N5660 VCE=200V;VBE(off)=1.5V
ICES
Collector cut-off current
2N5661 VCE=300V;VBE(off)=1.5V
2N5660 VCB=250V; IE=0
ICBO
Collector cut-off current
2N5661 VCB=400V; IE=0
hFE-1
DC current gain
2N5660
2N5661
IC=50mA ; VCE=2V
hFE-2
DC current gain
2N5660
2N5661
IC=0.5A ; VCE=5V
hFE-3
DC current gain
IC=1A ; VCE=5V
hFE-4
DC current gain
IC=2A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
ton
Turn-on time
2N5660 VCC=100V;IC=0.5A;IB1=-IB2=15mA
2N5661 VCC=100V;IC=0.5A;IB1=-IB2=25mA
toff
Turn-off time
2N5660 VCC=100V;IC=0.5A;IB1=-IB2=15mA
2N5661 VCC=100V;IC=0.5A;IB1=-IB2=25mA
MIN TYP. MAX UNIT
200
V
300
6
V
0.4
V
0.8
V
1.2
V
1.5
V
0.2 mA
1.0 mA
40
25
40
120
25
75
15
5
45 pF
0.25 μs
0.85
μs
1.2
2
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