IXFH30N50Q View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
MFG CO.
IXFH30N50Q Datasheet PDF : 4 Pages
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HiPerFETTM
Power MOSFETs
Q-Class
IXFH/IXFT 30N50Q
IXFH/IXFT 32N50Q
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
VDSS ID25
500 V 30 A
500 V 32 A
RDS(on)
0.16 Ω
0.15 Ω
trr ≤ 250 ns
Symbol
VDSS
V
DGR
VGS
V
GSM
ID25
IDM
IAR
EAR
E
AS
dv/dt
PD
TJ
T
JM
Tstg
T
L
M
d
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
500
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
500
Continuous
±20
Transient
±30
TC = 25°C
TC = 25°C,
pulse width limited by TJM
TC = 25°C
TC = 25°C
30N50Q
32N50Q
30N50Q
32N50Q
30
32
120
128
32
45
1500
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
5
360
-55 ... + 150
150
-55 ... + 150
1.6 mm (0.063 in) from case for 10 s
300
V
V
V
V
A
A
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°C
Mounting torque
TO-247
TO-268
1.13/10
6
4
Nm/lb.in.
g
g
Test Conditions
VGS = 0 V, ID = 250 uA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500
V
2.5
4.5 V
±100 nA
TJ = 25°C
TJ = 125°C
30N50Q
32N50Q
100 µA
1 mA
0.16 Ω
0.15 Ω
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l IXYS advanced low Q process
g
l Low gate charge and capacitances
- easier to drive
- faster switching
l International standard packages
l Low RDS (on)
l Unclamped Inductive Switching (UIS)
rated
l Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l Easy to mount
l Space savings
l High power density
© 2001 IXYS All rights reserved
98596D (03/01)
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