BD830 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

BD830

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

BD830

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC=- 500mA; IB= -50mA

VBE(on) Base-Emitter On Voltage

IC= -0.5A ; VCE= -2V

ICBO

Collector Cutoff Current

VCB= -30V; IE= 0

VCB=-30V; IE= 0; TC= 125℃

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -5mA ; VCE= -2V

hFE-2

DC Current Gain

IC= -150mA ; VCE= -2V

hFE-3

DC Current Gain

IC= -500mA ; VCE=- 2V

fT

Current-Gain—Bandwidth Product

IC= -50mA ; VCE=- 5V

MIN TYP. MAX UNIT

-100

V

-0.5

V

-1.0

V

-0.1

uA

-10

-10

uA

25

40

250

25

75

MHz

isc website：www.iscsemi.com

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