BB112 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

MFG CO.

BB112

Silicon Variable Capacitance Diode

Infineon Technologies 

BB 112

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Reverse current

IR

VR = 10 V

VR = 10 V, TA = 60 ˚C

Diode capacitance, f = 1 MHz

CT

VR = 1 V

VR = 8 V

Capacitance ratio

CT1

VR = 1 V, 8 V

CT8

Series resistance

rs

VR = 1 V, f = 0.5 MHz

Q factor

Q

VR = 1 V, f = 0.5 MHz

Temperature coefficient

TCC

of diode capacitance

VR = 1 V, f = 1 MHz

Capacitance matching

∆CT

VR = 1 … 8 V

CT

min.

–

–

440

17.5

15

–

–

–

Values

typ.

max.

–

50

–

200

470

520

–

34

–

–

1.4

–

480

–

500

–

Unit

nA

pF

–

Ω

–

ppm/K

–

–

3

%

Semiconductor Group

2

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