2SC3714 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

2SC3714

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3714

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB=2A

VBE(sat) Base-Emitter Saturation Voltage

IC= 10A; IB=2A

ICBO

Collector Cutoff Current

VCB= 500V; IE= 0

1.0 V

1.5 V

100 μA

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

0.1 mA

hFE-1

DC Current Gain

IC= 10A; VCE= 2V

10

40

fT

Current-Gain—Bandwidth Product

IC= 2A; VCE= 10V

20

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= 10A , IB1= -IB2= 2A

RL= 15Ω; VCC=150V,VBB2=4V

MHZ

0.5 μs

2.0 μs

0.3 μs

isc website：www.iscsemi.cn

2 isc & iscsemi is registered trademark

Share Link: