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S594TRW View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
MFG CO.
S594TRW Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
S594T / S594TR / S594TRW
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
250
40
200
150
100
50
0
0
95 10765
25 50 75 100 125 150
Tamb – Ambient Temperature ( °C )
30
20
10
0
0
95 10768
VDS = 5 V
f = 200 MHz
1
2
3
4
VG2S – Gate 2 Source Voltage ( V )
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Forward Transadmittance vs. Gate 2 Source Voltage
20
16
12
VG2S= 4 V
3V
8
2V
4
0
0
95 10766
1V
1
2
3
4
5
VDS – Drain Source Voltage ( V )
Figure 2. Drain Current vs. Drain Source Voltage
4
3
2
1
0
0
95 10769
VDS = 5 V
f = 200 MHz
1
2
3
4
5
6
VG2S – Gate 2 Source Voltage ( V )
Figure 5. Gate 1 Input Capacitance vs. Gate 2 Source Voltage
20
16
12
8
4
VDS = 5 V
0
0
1
2
3
4
95 10767
VG2S – Gate 2 Source Voltage ( V )
Figure 3. Drain Current vs. Gate 2 Source Voltage
2
VG2S = 4 V
f = 200 MHz
1.5
1
0.5
0
3
4
5
6
7
9511143
VDS – Drain Source Voltage ( V )
Figure 6. Output Capacitance vs. Drain Source Voltage
www.vishay.com
4
Document Number 85048
Rev. 1.6, 08-Sep-08

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