M74HC4050RM13TR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

M74HC4050RM13TR

HEX BUFFER/CONVERTER

STMicroelectronics 

M74HC4050

CAPACITIVE CHARACTERISTICS

Test Condition

Value

Symbol

Parameter

VCC

(V)

TA = 25°C

-40 to 85°C -55 to 125°C Unit

Min. Typ. Max. Min. Max. Min. Max.

CIN Input Capacitance 5.0

CPD Power Dissipation

Capacitance (note 5.0

1)

5 10

10

10 pF

26

pF

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/6 (per gate)

TEST CIRCUIT

CL = 50pF or equivalent (includes jig and probe capacitance)

RT = ZOUT of pulse generator (typically 50Ω)

WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)

4/8

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