MBRD835L View Datasheet(PDF) - ON Semiconductor
Part Name
Description
MFG CO.
MBRD835L Datasheet PDF : 5 Pages
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MBRD835L, SBRD8835L
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 88°C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 80°C)
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
VRRM
35
V
VRWM
VR
IF(AV)
A
8.0
IFRM
A
16
IFSM
A
75
Repetitive Avalanche Current
(Current Decaying Linearly to Zero in 1 ms, Frequency Limited by TJmax)
IAR
A
2.0
Storage / Operating Case Temperature
Tstg
−65 to +150
°C
Operating Junction Temperature (Note 1)
TJ
−65 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Case
Thermal Resistance − Junction−to−Ambient (Note 2)
2. Rating applies when surface mounted on the minimum pad size recommended.
Symbol
RqJC
RqJA
Value
2.8
80
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 8 Amps, TC = + 25°C)
(iF = 8 Amps, TC = +125°C)
VF
V
0.51
0.41
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TC = + 25°C)
(Rated dc Voltage, TC = +100°C)
IR
mA
1.4
35
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
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