Rev. 2.1
BSP88
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Dynamic Characteristics
Transconductance
gfs
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS³2*ID*RDS(on)max,
ID=0.28A
VGS=0, VDS=25V,
f=1MHz
VDD=120V, VGS=4.5V,
ID=0.35A, RG=15W
0.19 0.38 - S
-
76 95 pF
-
12 15
-
6
9
-
3.6 5.4 ns
-
3.5 5.2
- 17.9 26.8
- 18.9 28.3
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
Qgd
Qg
VDD=192V, ID=0.35A
VDD=192V, ID=0.35A,
VGS=0 to 10V
-
0.2 0.3 nC
-
2
3
-
4.5 6.8
Gate plateau voltage
V(plateau) VDD=192V, ID = 0.35 A
-
2.7
-V
Reverse Diode
Inverse diode continuous
IS
forward current
Inv. diode direct current, pulsed ISM
Inverse diode forward voltage VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
TA=25°C
VGS=0, IF = IS
VR=120V, IF=lS,
diF/dt=100A/µs
-
- 0.35 A
-
-
1.4
- 0.86 1.2 V
-
66 82 ns
- 119 149 nC
Page 3
2009-08-18