T2322B View Datasheet(PDF) - Philips Electronics

Part Name

Description

MFG CO.

T2322B

Triacs logic level

Philips Electronics 

Philips Semiconductors

Triacs logic level

Product specification

T2322B

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

Rth j-mb

Rth j-a

Thermal resistance

full cycle

junction to mounting base half cycle

Thermal resistance

in free air

junction to ambient

MIN.

-

-

-

TYP.

-

-

-

MAX.

3.0

3.7

95

UNIT

K/W

K/W

K/W

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER

IGT

Gate trigger current

IL

Latching current

IH

Holding current

VT

On-state voltage

VGT

Gate trigger voltage

ID

Off-state leakage current

CONDITIONS

VD = 12 V; IT = 0.1 A

T2+ G+

T2+ G-

T2- G-

T2- G+

VD = 12 V; IGT = 0.1 A

T2+ G+

T2+ G-

T2- G-

T2- G+

VD = 12 V; IGT = 0.1 A

IT = 5 A

VD = 12 V; IT = 0.1 A

VD = 400 V; IT = 0.1 A; Tj = 125 ˚C

VD = VDRM(max); Tj = 125 ˚C

MIN. TYP. MAX. UNIT

- 2.0 5 mA

- 2.5 5 mA

- 2.5 5 mA

- 5.0 10 mA

-

1.6 10 mA

-

4.5 15 mA

-

1.2 10 mA

-

2.2 15 mA

-

1.2 10 mA

- 1.4 1.70 V

- 0.7 1.5 V

0.25 0.4 -

V

-

0.1 0.5 mA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

dVD/dt

tgt

Critical rate of rise of

off-state voltage

Gate controlled turn-on

time

VDM = 67% VDRM(max); Tj = 100 ˚C;

exponential waveform; RGK = 1 kΩ

ITM = 6 A; VD = VDRM(max); IG = 0.1 A;

dIG/dt = 5 A/µs

MIN. TYP. MAX. UNIT

- 100 - V/µs

-

2

-

µs

October 2001

3

Rev 1.100

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