BT236X-600F View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
BT236X-600F Datasheet PDF : 12 Pages
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Philips Semiconductors
BT236X series F and G
6 A Four-quadrant triacs
8. Dynamic characteristics
Table 7: Dynamic characteristics
Symbol Parameter Conditions
dVD/dt
rate of rise of
off-state
voltage
VDM = 0.67VDRM(max);
Tj = 125 °C;
exponential waveform;
gate open circuit
dVcom/dt rate of
change of
commutating
voltage
VDM = 400 V;
Tj = 95 °C;
IT(RMS) = 6 A;
dIcom/dt = 3.6 A/ms;
gate open circuit; see
Figure 12
tgt
gate-
ITM = 12 A;
controlled
VD = VDRM(max);
turn-on time IG = 0.1 A;
dIG/dt = 5 A/µs
BT236X-600
BT236X-800
BT236X-600F
BT236X-600G Unit
BT236X-800G
Min Typ Max Min Typ Max Min Typ Max
100 250 -
50 250 -
200 250 -
V/µs
-
20 -
-
20 -
10 20 -
V/µs
-
2
-
-
2
-
-
2
- µs
1.6
VGT
VGT(25°C)
1.2
0.8
001aab101
3
IGT
IGT(25°C)
2
(1)
(2)
(3)
(4)
1
001aae042
(3)
(4)
(2)
(1)
0.4
−50
0
50
100
150
Tj (°C)
0
−50
0
50
100
150
Tj (°C)
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
(1) T2− G−
(2) T2+G−
(3) T2+ G+
(4) T2−G+
Fig 8. Normalized gate trigger current as a function of
junction temperature
BT236X_SER_F_G_2
Product data sheet
Rev. 02 — 14 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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