N5027-X-TF3-C-T View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
MFG CO.
N5027-X-TF3-C-T Datasheet PDF : 4 Pages
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N5027
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Tc = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
850
V
Collector-Emitter Voltage
VCEO
800
V
Collector-Emitter Voltage
VEBO
7
V
Peak Collector Current
IC
3
A
Collector Current (Pulse)
ICP
10
A
Base Current
IB
1.5
A
Peak Collector Consume Dissipation
Peak Junction Temperature
Storage Temperature
PC
50
W
TJ
150
℃
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
SYMBOL
TEST CONDITIONS
BVCBO IC=1mA, IE=0
BVCEO IC=5mA, IB=0
BVEBO IE=1mA, IC=0
VCEX(SUS)
IC=1.5A, IB1= -IB2=0.3A
L=2mH, Clamped
ICBO VCB=800V, IE=0
IEBO VEB=5V, IC=0
hFE 1 VCE=5V, IC=0.2A
hFE 2 VCE=5V, IC=1A
VCE (SAT) IC=1A, IB=0.3A
VBE (SAT) IC=1.5A, IB=0.3A
Cob VCB=10V, f=1MHz, IE=0
fT
VCE=10V, IC=0.2A
tON VCC=400V
tSTG IC=5IB1= -2.5IB2=2A
tF
RL=200Ω
CLASSIFICATION of hFE1
MIN TYP MAX UNIT
850
V
800
V
7
V
800
V
10 μA
10 μA
10
40
6
1.1
V
1.5
V
60
pF
15
MHz
0.5 μs
3
μs
0.3 μs
RANK
RANGE
N
10 ~ 20
R
15 ~ 30
O
20 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R203-032,A
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