IRF730 View Datasheet(PDF) - Nell Semiconductor Co., Ltd
Part Name
Description
MFG CO.
IRF730 Datasheet PDF : 7 Pages
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SEMICONDUCTOR
IRF730 Series RRooHHSS
Nell High Power Products
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
100000
10000
VGS = 0V, f =1MHZ
Ciss = Cgs +Cgd (Cds = shorted )
Crss = Cgd
Coss = Cds +Cgd
1000
100
Ciss
Coss
10
Crss
1
1
10
100
1000
Drain-to-Source voltage, VDS (V)
Fig.6 Typical gate charge vs. Gate-to-Source
voltage
16
lD = 5.5A
14
VDS = 320V
VDS = 200V
VDS = 80V
12
8
4
For test circuit see
figure 13
0
0
5
10
15
20
25
Total gate charge, QG (nC)
Fig.7 Typical Source-Drain diode forward
voltage
100
10
TJ = 15 0°C
TJ = 25 °C
1
0.1
0.4
0.6
0.8
VGS = 0V
1
1.2
Source-to-Drain voltage, VSD (V)
Fig.8 Maximum safe operating area
100
10
Operation in This Area is Limited by RDS(ON)
10µs
100µs
1
Note:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
0.1
10
100
1ms
10ms
1000
Drain-to-Source voltage, VDS (V)
Fig.9 Maximum drain current vs.
Case temperature
6
5
4
3
2
1
0
25
50
75
100
125
150
Case temperature, TC (°C)
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Page 4 of 7
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