MJE15032 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

MJE15032

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

MJE15032

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 250V(Min)

·DC current gain -

: hFE = 50 (Min) @IC= 0.5 A

: hFE = 10 (Min) @IC= 2.0 A

·Complement to Type MJE15033

APPLICATIONS

·Designed for use as high–frequency drivers in audio

amplifiers.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

250

V

VCEO Collector-Emitter Voltage

250

V

VEBO Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

8

A

ICM

Collector Current-Peak

16

A

IBB

Base Current

Collector Power Dissipation

PC

@Ta=25℃

Collector Power Dissipation

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature

2

A

2

W

50

150

℃

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance,Junction to Case

2.5 ℃/W

Thermal Resistance,Junction to Ambient 62.5 ℃/W

isc Website：www.iscsemi.cn

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