BF419 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
BF419 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN high-voltage transistor
Product specification
BF419
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
Tstg
Tj
Tamb
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
note 1
Tmb ≤ 90 °C
Tamb ≤ 70 °C
MIN.
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
300
250
5
100
300
100
6
800
+150
150
+150
UNIT
V
V
V
mA
mA
mA
W
mW
°C
°C
°C
Note
1. Precautions should be taken during switch-on of the BF419 where an overshoot of current is likely to occur.
The amplitude of the overshoot depends on the relative magnitude of stray external capacities to the transistor
collector capacity. It is desirable to keep the stray capacities to a minimum by short lead lengths etc. so as to minimize
the area of the switching path.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
VALUE
100
10
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
ICBO
IEBO
hFE
VCEsat
Cc
Cre
fT
collector cut-off current
IE = 0; VCB = 250 V
−
emitter cut-off current
IC = 0; VEB = 3 V
−
DC current gain
IC = 20 mA; VCE = 10 V
45
collector-emitter saturation voltage IC = 200 mA; IB = 20 mA; note 1
−
collector capacitance
IE = ie = 0; VCB = 30 V; f = 1 MHz
−
feedback capacitance
IC = ic = 0; VCE = 30 V; f = 1 MHz
−
transition frequency
IC = 15 mA; VCE = 10 V; f = 100 MHz 90
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MAX.
50
50
−
6
4.5
3.5
−
UNIT
nA
nA
V
pF
pF
MHz
1997 Apr 09
3
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