IRL3202PBF View Datasheet(PDF) - International Rectifier

Part Name

Description

MFG CO.

IRL3202PBF

HEXFET® Power MOSFET

International Rectifier 

IRL3202PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

20 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

VGS(th)

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

–––

–––

–––

0.70

0.029 –––

––– 0.019

––– 0.016

––– –––

V/°C

Ω

V

Reference to 25°C, ID = 1mA

VGS = 4.5V, ID = 29A „

VGS = 7.0V, ID = 29A „

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

28 ––– ––– S VDS = 16V, ID = 29A

IDSS

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250

µA VDS = 20V, VGS = 0V

VDS = 10V, VGS = 0V, TJ = 150°C

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

––– ––– 100 n A VGS = 10V

––– ––– -100

VGS = -10V

Qg

Total Gate Charge

––– ––– 43

ID = 29A

Qgs

Gate-to-Source Charge

––– ––– 12 nC VDS = 16V

Qgd

Gate-to-Drain ("Miller") Charge

––– ––– 13

VGS = 4.5V, See Fig. 6 „

td(on)

tr

td(off)

tf

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

––– 9.8 –––

VDD = 10V

––– 100 ––– ns ID = 29A

––– 63 –––

RG = 9.5Ω, VGS = 4.5V

––– 82 –––

RD = 0.3Ω, „

LD

Internal Drain Inductance

LS

Internal Source Inductance

Between lead,

D

––– 4.5 –––

6mm (0.25in.)

nH from package

G

––– 7.5 –––

and center of die contact

S

Ciss

Input Capacitance

Coss

Output Capacitance

––– 2000 –––

VGS = 0V

––– 800 ––– pF VDS = 15V

Crss

Reverse Transfer Capacitance

––– 290 –––

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

I SM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 48

A showing the

integral reverse

G

––– ––– 190

p-n junction diode.

S

––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V „

––– 68 100 ns TJ = 25°C, IF = 29A

––– 130 190 nC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

‚ Starting TJ = 25°C, L = 0.64mH

RG = 25Ω, IAS = 29A.

ƒ ISD ≤ 29A, di/dt ≤ 63A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

2

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