BSS84 View Datasheet(PDF) - Nanjing International Group Co
Part Name
Description
MFG CO.
BSS84 Datasheet PDF : 5 Pages
| |||
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
STATIC CHARACTERISTICS
Drain-source breakdown voltage
V (BR)DSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
VDS =-50V,VGS = 0V
IDSS
VDS =-25V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±20V, VDS = 0V
Gate threshold voltage (note 3)
VGS(th)
VDS =VGS, ID =-250µA
Drain-source on-resistance (note 3)
RDS(on)
VGS =-5V, ID =-0.1A
VGS =-10V, ID =-0.1A
Forward transconductance (note 1)
gFS
VDS=-25V; ID=-100mA
DYNAMIC CHARACTERISTICS (note 4)
Input capacitance
Ciss
Output capacitance
Coss
VDS =5V,VGS =0V,f =1MHz
Reverse transfer capacitance
Crss
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VDD=-15V,
RL=50Ω, ID =-2.5A
Turn-off fall time
tf
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
Pulsed Current
ISM
Diode forward voltage (note 3)
VSD
IS=-0.13A, VGS = 0V
Notes :
1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t≤10s.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%.
4. Guaranteed by design, not subject to producting.
BSS84
Min Typ Max Unit
-50
V
-15
µA
-0.1 µA
±5
µA
-0.9
-2
V
10
Ω
8
Ω
50
mS
30
pF
10
pF
5
pF
2.5
ns
1
ns
16
ns
8
ns
-0.13 A
-0.52 A
-2.2
V
2
A-5,Jun,2014
Share Link: 