BC516 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
BC516 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP Darlington transistor
Product specification
BC516
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
VBEsat
VBEon
fT
collector cut-off current
IE = 0; VCB = −30 V
−
−
emitter cut-off current
IC = 0; VEB = −10 V
−
−
DC current gain
IC = −20 mA; VCE = −2 V; see Fig.2 30000 −
collector-emitter saturation voltage IC = −100 mA; IB = −0.1 mA
−
−
base-emitter saturation voltage IC = −100 mA; IB = −0.1 mA
−
−
base-emitter on-state voltage
IC = −10 mA; VCE = −5 V
−
−
transition frequency
IC = −30 mA; VCE = −5 V; f = 100 MHz −
220
−100
−100
−
−1
−1.5
−1.4
−
nA
nA
V
V
V
MHz
100000
handbook, full pagewidth
hFE
80000
60000
40000
20000
0
−1
VCE = −2 V.
MGD836
−10
−102
−103
IC (mA)
Fig.2 DC current gain; typical values.
1999 Apr 23
3
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