BC808 View Datasheet(PDF) - Weitron Technology

Part Name

Description

MFG CO.

BC808

PNP Transistor Surface Mount

Weitron Technology 

BC808

Characteristics Curve

-500

-400

-300

IEI=EIE=-IE=5I-=E.-04I=-E4m.53=.-I0mAE.35m-=A.m20A-.mA52mA.0AmA

IE = -

1.5mA

-200

IE = - 1.0mA

Pr = 600mW

IE = - 0.5mA

-100

-0

IE = 0

-0

-1

-2

-3

-4

-5

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

-20

IE

=

-

80µA

IE =

-

70µA

-16

IE= - 60µA

IE= - 50µA

-12

IE= - 40µA

-8

IE= - 30µA

P

r

=600mW

IE = - 20µA

-4

IE = - 10µA

-0

IE = 0µA

-0

-10

-20

-30

-40

-50

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 2. Static Characteristic

1000

PULSE

VCE = - 2.0V

100

- 1.0V

10

1

-0.1

-1

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

Figure 3. DC current Gain

-1000

-100

VCE = - 1V

PULSE

-10

-1

-0.1

-0.4

-0.5

-0.6

-0.7

-0.8

-0.9

VBE[V], BASE-EMITTER VOLTAGE

Figure 5. Ease-Emitter On Voltage

-10

IC = 101E

PULSE

VCE(sat)

-1

-0.1

VCE(sat)

-0.01

-0.1

-1

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

100

f = 1.0MHz

Cob

Cob

10

1

-0.1

-1

-10

-100

VCE[V], COLLECTOR-BASE VOLTAGE

VBE[V], EMITTER-BASE VOLTAGE

Figure 6. Input Output Capacitance

WEITRON

3/4

http://www.weitron.com.tw

09-Jul-07

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