BCW69LT1 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

MFG CO.

BCW69LT1

General Purpose Transistors

ON Semiconductor 

BCW69LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = −2.0 mAdc, VCE = −5.0 Vdc)

BCW69

BCW70

hFE

—

120

260

215

500

Collector−Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc)

Base−Emitter On Voltage (IC = −2.0 mAdc, VCE = −5.0 Vdc)

SMALL−SIGNAL CHARACTERISTICS

VCE(sat)

—

−0.3

Vdc

VBE(on)

−0.6

−0.75

Vdc

Output Capacitance

(IE = 0, VCB = −10 Vdc, f = 1.0 MHz)

Cobo

—

7.0

pF

Noise Figure

NF

—

10

dB

(IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)

TYPICAL NOISE CHARACTERISTICS

(VCE = − 5.0 Vdc, TA = 25°C)

10

7.0

5.0

3.0

2.0 1.0 mA

IC = 10 μA

30 μA

100 μA

300 μA

BANDWIDTH = 1.0 Hz

RS ≈ 0

1.0

10 20

50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

f, FREQUENCY (Hz)

Figure 1. Noise Voltage

1.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

10 20

IC = 1.0 mA

BANDWIDTH = 1.0 Hz

RS ≈ ∞

300 μA

100 μA

30 μA

10 μA

50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

f, FREQUENCY (Hz)

Figure 2. Noise Current

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