75N75L-TF3-R(2005) View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
MFG CO.
75N75L-TF3-R Datasheet PDF : 8 Pages
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75N75
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs.
Junction Temperature
1.2
1.1
1.0
*Note:
0.9
1. VGS=0V
2. ID=250µA
0.8
-100
-50 0 50 100 150 200
Junction Temperature, TJ (℃)
Power MOSFET
On-Resistance Variation vs.
Junction Temperature
3.0
2.5
2.0
1.5
1.0
*Note:
0.5
1. VGS=10V
2. ID=3.5A
0.0
-100 -50 0 50 100 150 200
Junction Temperature, TJ (℃)
Maximum Safe Operating
100 Operation in This
Area by RDS(ON)
100µs
10
10ms 1ms
1
0.1
1
DC
*Note:
1. Tc=25℃
2. TJ=150℃
3. Single Pulse
10
100
1000
Drain-Source Voltage, VD (V)
Transient Thermal Response Curve
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
*Note :
1. ZθJC (t) = 0.88℃/W Max.
2. Duty Factor , D=t1/t2
3. TJ -TC=PDM×ZθJC (t )
1E-5 1E-4 1E-3 0.01 0.1 1 10
Square Wave Pulse Duration, t1 (sec)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Maximum Drain Current vs. Case
Temperature
70
60
50
40
30
20
10
0
25
50
75 100 125 150
Case Temperature, TC (℃)
7 of 8
QW-R502-097,A
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