2N5876 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

2N5876

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2N5875 2N5876

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-emitter

sustaining voltage

2N5875

2N5876

IC=-0.2A ;IB=0

VCEsat-1 Collector-emitter saturation voltage IC=-5A;IB=-0.5A

VCEsat-2 Collector-emitter saturation voltage IC=-10A;IB=-2.5A

VBEsat Base-emitter saturation voltage

IC=-10A;IB=-2.5A

VBE

Base-emitter on voltage

IC=-4A ; VCE=-4V

ICBO

Collector cut-off current

VCB=ratedVCBO; IB=0

2N5875 VCE=-30V; IB=0

ICEO

Collector cut-off current

2N5876 VCE=-40V; IB=0

ICEX

Collector cut-off current

VCE=ratedVCE; VBE=1.5V

TC=150℃

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-4V

hFE-2

DC current gain

IC=-4A ; VCE=-4V

hFE-3

DC current gain

IC=-10A ; VCE=-4V

fT

Trainsistion frequency

IC=-0.5A ; VCE=-10V;f=1MHz

MIN TYP. MAX UNIT

-60

V

-80

-1.0

V

-3.0

V

-2.5

V

-1.5

V

-0.5 mA

-1.0 mA

-0.5

-5.0

mA

-1.0 mA

35

20

100

4

4

MHz

2

Share Link: