2N5876 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
2N5876 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5875 2N5876
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Complement to type 2N5877 2N5878
APPLICATIONS
·For general-purpose power amplifier
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2N5875
2N5876
Open emitter
VCEO
Collector-emitter voltage
2N5875
2N5876
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current-peak
IB
Base current
PD
Total Power Dissipation
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
VALUE
-60
-80
-60
-80
-5
-10
-20
-4
150
200
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.17
UNIT
℃/W
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