2N5883 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
MFG CO.
2N5883 Datasheet PDF : 3 Pages
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Product Specification
Silicon PNP Power Transistors
www.jmnic.com
2N5883 2N5884
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2N5883
60
VCEO(sus)
Collector-emitter
sustaining voltage
IC=0.2A ;IB=0
2N5884
80
VCEsat-1 Collector-emitter saturation voltage IC=15A; IB=1.5A
VCEsat-2 Collector-emitter saturation voltage IC=25A ;IB=6.25A
VBEsat Collector-emitter saturation voltage IC=25A ;IB=6.25A
VBE
Base-emitter on voltage
IC=10A ; VCE=4V
ICBO
Collector cut-off current
VCB=ratedVCBO; IB=0
2N5883 VCE=30V; IB=0
ICEO
Collector cut-off current
2N5884 VCE=40V; IB=0
ICEV
Collector cut-off current
(VBE(off)=1.5V)
VCE=ratedVCEO;
VCE=ratedVCEO; TC=150℃
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=3A ; VCE=4V
35
hFE-2
DC current gain
IC=10A ; VCE=4V
20
hFE-3
DC current gain
IC=25A ; VCE=4V
4
fT
Trainsistion frequency
IC=1A ; VCE=10V;f=1MHz
4
Ccbo
Collector base capacitance
IE=0; VCB=10V;f=1MHz
Switching times
tr
Rise time
ts
Storage time
tf
Fall time
IC=10A ;IB1=- IB2=1A
VCC=30V
TYP.
MAX UNIT
V
1
V
4
V
2.5
V
1.5
V
1
mA
2
mA
1
mA
10
1
mA
100
MHz
500
pF
0.7
μs
1
μs
0.8
μs
JMnic
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