BUH51 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
MFG CO.
BUH51 Datasheet PDF : 10 Pages
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1000
100
10
1
BUH51
TYPICAL STATIC CHARACTERISTICS
1000
TJ = 25°C
f(test) = 1 MHz
900
Cib
800
TJ = 25°C
Cob
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitance
700
600
BVCER @ 10 mA
500
BVCER(sus) @ 200 mA, 25 mH
400
100
10
100
1000
10000
RBE (Ω)
Figure 10. Resistive Breakdown
100000
2500
IB1 = IB2
2000
VCC = 300 V
PW = 40 µs
1500
TYPICAL SWITCHING CHARACTERISTICS
10
IC/IB = 5
8
IC/IB = 5
6
IB1 = IB2
VCC = 300 V
PW = 40 µs
1000
4
500
0
0
7
5
TJ = 125°C
TJ = 25°C
1
2
3
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Resistive Switching, ton
IC/IB = 5
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
3
TJ = 125°C
TJ = 25°C
1
0
1
2
3
IC, COLLECTOR CURRENT (AMPS)
Figure 13. Inductive Storage Time, tsi
2
TJ = 125°C
TJ = 25°C
0
0
1
2
3
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Resistive Switch Time, toff
4
IC/IB = 10
IB1 = IB2
VCC = 15 V
3
VZ = 300 V
LC = 200 µH
2
1
TJ = 125°C
TJ = 25°C
0
0.5
1
1.5
2
IC, COLLECTOR CURRENT (AMPS)
Figure 13 Bis. Inductive Storage Time, tsi
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