GI854-E3/54 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
MFG CO.
GI854-E3/54 Datasheet PDF : 4 Pages
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GI850 thru GI858
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL GI850 GI851 GI852
GI854
Maximum
3.0 A
TA = 25 °C
1.25
instantaneous
VF
forward voltage
9.4 A
TJ = 175 °C
1.10
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
IR
TA = 100 °C
10
150
150
200
250
Maximum reverse
recovery current
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
IRM(REC)
200
Maximum reverse
recovery time
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
trr
2.0
Typical junction
capacitance
4.0 V, 1 MHz
CJ
28
GI856
300
GI858 UNIT
V
μA
500
ns
A
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL GI850 GI851 GI852
GI854
GI856
GI858 UNIT
Typical thermal resistance
RθJA (1)
RθJL (1)
22
°C/W
8.0
Note
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, with both leads equally heat sink
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
GI856-E3/54
1.1
54
GI856-E3/73
1.1
73
BASE QUANTITY
1400
1000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
8.0
L = Lead Length
TL = Lead Temperature
6.0
4.0
L
L
=
0=.307.255""(9(.65.3mmmm) )
0.8" x 0.8" x 0.04"
(20 mm x 20 mm x 1 mm)
Copper Heatsink
2.0 TA = Ambient Temperature
0.375" (9.5 mm) Lead Length
0
30 50 70 90 110 130 150 170
Temperature (°C)
Fig. 1 - Forward Current Derating Curves
1000
8.3 ms Single Half Sine-Wave
TJ = 25 °C
100
Non-Repetitive
TJ = 150 °C
TJ = 25 °C
Repetitive
TJ = 150 °C
10
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Peak Forward Surge Current
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For technical questions within your region, please contact one of the following: Document Number: 88630
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 10-Nov-09
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