Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX54/A/B/C
DESCRIPTION
·With TO-220C package
·High DC current gain
·DARLINGTON
·Complement to type BDX53/A/B/C
APPLICATIONS
·Power linear and switching applications
·Hammer drivers,audio amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
BDX54
VCBO
Collector-base voltage
BDX54A
Open emitter
BDX54B
BDX54C
BDX54
VCEO
BDX54A
Collector-emitter voltage
Open base
BDX54B
BDX54C
VEBO
Emitter-base voltage
Open collector
IC
Collector current-DC
ICM
Collector current-Pulse
IB
Base current
PC
Collector power dissipation
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-45
-60
-80
-100
-45
-60
-80
-100
-5
-8
-12
-0.2
60
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
MAX
2.08
UNIT
℃/W