IRFP460LC
7000
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
6000
Crss = Cgd
Coss = Cds + C gd
5000
C iss
4000
3000
C oss
2000
1000
0
1
C rss
10
100
V DS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0
0.4
0.8
1.2
1.6
2
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
20
ID = 20A
16
12
VDS = 400V
VDS = 250V
VDS = 100V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
30
60
90
120
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10µs
100µs
10
1ms
TC = 25°C
TJ = 150°C
Single Pulse
1
10ms
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area