A940 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

A940

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA940

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; IB= 0

-150

V

V(BR)CBO Collector-Base Breakdown Voltage

IC= -1mA ; IE= 0

-150

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -1mA ; IC= 0

-5

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB=B -50mA

VBE(on) Base-Emitter On Voltage

IC= -0.5A ; VCE= -5V

ICBO

Collector Cutoff Current

VCB= -120V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-1.5

V

-0.85 V

-10 μA

-10 μA

hFE

DC Current Gain

IC= -0.5A ; VCE= -10V

40

140

fT

Current-Gain—Bandwidth Product

IC= -0.5A;VCE= -10V;ftest= 1MHz

4

MHz

isc Website：www.iscsemi.cn

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