A940 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

A940

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA940

DESCRIPTION

·Collector-Emitter Breakdown Voltage

: V(BR)CEO= -150V(Min)

·DC Current Gain

: hFE= 40-140@ IC= -0.5A

·Complement to Type 2SC2073

APPLICATIONS

·Designed for use in general purpose power amplifier ,

vertical output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

VCEO Collector-Emitter Voltage

VEBO Emitter-Base Voltage

IC

Collector Current-Continuous

ICM

Collector Current-Peak

Total Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-150

V

-150

V

-5

V

-1.5

A

-3.0

A

25

W

150

℃

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX

5.0

UNIT

℃/W

isc Website：www.iscsemi.cn

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