BTS113 View Datasheet(PDF) - Siemens AG

Part Name

Description

MFG CO.

BTS113

TEMPFET®

Siemens AG 

Continuous drain current ID = f (TC)

Parameter: VGS ≥ 4.5 V

BTS 113A

Forward characteristics of reverse diode

IF = f (VSD)

Parameter: Tj, tp = 80 µs

Typ. gate-source leakage current

IGSS = f (TC)

Parameter: VGS = 10 V, VDS = 0

Typ. capacitances C = f (VDS)

Parameter: VGS = 0, f = 1 MHz

Semiconductor Group

7

Share Link: