Max. power dissipation Ptot = f (TC)
BTS 113A
Typ. drain-source on-state resistance
RDS(on) = f (ID)
Parameter: VGS
Typical output characteristics ID = f (VDS)
Parameter: tp 80 = µs
Safe operating area ID = f (VDS)
Parameter: D = 0.01, TC = 25 °C
Semiconductor Group
5