BTS113 View Datasheet(PDF) - Siemens AG
Part Name
Description
MFG CO.
BTS113 Datasheet PDF : 9 Pages
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BTS 113A
Electrical Characteristics
at Tj = 25 °C, unless otherwise specified.
Parameter
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA
Gate threshold voltage
VGS = VDS, ID = 1 mA
Zero gate voltage drain current
VGS = 0 V, VDS = 60 V
Tj = 25 °C
Tj = 125 °C
Gate-source leakage current
VGS = ± 20 V, VDS = 0
Tj = 25 °C
Tj = 150 °C
Drain-source on-state resistance
VGS = 4.5 V, ID = 5.8 A
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 × ID × R , DS(on)max ID = 5.8 A
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Turn-on time ton, (ton = td(on) + tr)
VCC = 30 V, VGS = 5.0 V, ID = 3.0 A,
RGS = 50 Ω
Turn-off time toff, (toff = td(off) + tf)
VCC = 30 V, VGS = 5.0 V, ID = 3.0 A,
RGS = 50 Ω
Symbol
min.
V(BR)DSS
60
VGS(th)
1.6
IDSS
–
–
IGSS
–
–
RDS(on)
–
gfs
4.5
Ciss
–
Coss
–
Crss
–
td(on)
–
tr
–
td(off)
–
tf
–
Values
Unit
typ.
max.
V
–
–
2.0
2.5
µA
0.1
1.0
10
100
10
100
nA
2
4
µA
Ω
0.14
0.17
S
7.5
–
pF
420
560
160
250
60
110
15
25
ns
55
80
45
60
40
55
Semiconductor Group
2
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