FPN430A View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

MFG CO.

FPN430A

PNP Low Saturation Transistor

Fairchild Semiconductor 

PNP Low Saturation Transistor

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

BVCEO

BVCBO

Collector-Emitter Breakdown

Voltage

Collector-Base Breakdown Voltage

BVEBO

Emitter-Base Breakdown Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC = 10 mA, IB = 0

IC = 100 µA, IE = 0

IE = 100 µA, IC = 0

VCB = 30 V, IE = 0

VCB = 30 V, IE = 0, TA = 100°C

VEB = 4.0 V, IC = 0

30

V

35

V

5.0

V

100

nA

10

µA

100

nA

ON CHARACTERISTICS*

hFE

VCE(sat)

VBE(sat)

VBE(on)

DC Current Gain

IC = 100 mA, VCE = 2.0 V 430

100

430A 250

IC = 1.0 A, VCE = 2.0 V

60

IC = 2.0 A, VCE = 2.0 V

40

Collector-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA

430

500

mV

430A

450

mV

IC = 2.0 A, IB = 200 mA

800

mV

Base-Emitter Saturation Voltage

IC = 1.0 A, IB = 100 mA

1.25

V

Base-Emitter Saturation Voltage

IC = 1.0 A, VCE = 2.0 V

1.0

V

SMALL SIGNAL CHARACTERISTICS

Cobo

FT

Output Capacitance

Transition Frequency

VCB = 10 V, IE = 0, f = 1.0 MHz

IC = 100 mA, VCE = 5.0 V,

f = 100 MHz

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

25

pF

100

MHz

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