AM28F512-70EE View Datasheet(PDF) - Advanced Micro Devices

Part Name

Description

MFG CO.

AM28F512-70EE

512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

Advanced Micro Devices 

write cycles, the command register internally latches

address and data needed for the programming and

erase operations. For system design simplification, the

Am28F512 is designed to support either WE# or CE#

controlled writes. During a system write cycle, ad-

dresses are latched on the falling edge of WE# or CE#

whichever occurs last. Data is latched on the rising edge

of WE# or CE# whichever occurs first. To simplify the fol-

lowing discussion, the WE# pin is used as the write cycle

control pin throughout the rest of this text. All setup and

hold times are with respect to the WE# signal.

AMD’s Flash technology combines years of EPROM

and EEPROM experience to produce the highest levels

of quality, reliability, and cost effectiveness. The

Am28F512 electrically erases all bits simultaneously

using Fowler-Nordheim tunneling. The bytes are pro-

grammed one byte at a time using the EPROM

programming mechanism of hot electron injection.

BLOCK DIAGRAM

VCC

VSS

VPP

WE#

State

Control

Erase

Voltage

Switch

To Array

DQ0–DQ7

Input/Output

Buffers

CE#

OE#

Command

Register

Program

Voltage

Switch

Chip Enable

Output Enable

Logic

Data

Latch

Low VCC

Detector

A0–A15

Program/Erase

Pulse Timer

Y-Decoder

Address

Latch

X-Decoder

Y-Gating

524,288

Bit

Cell Matrix

PRODUCT SELECTOR GUIDE

Family Part Number

Speed Options (VCC = 5.0 V ± 10%)

Max Access Time (ns)

CE# (E#) Access (ns)

OE# (G#) Access (ns)

11561G-1

Am28F512

-70

-90

-120

-150

-200

70

90

120

150

200

70

90

120

150

200

35

35

50

55

55

2

Am28F512

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