7N60G-A-T2Q-R View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
MFG CO.
7N60G-A-T2Q-R Datasheet PDF : 6 Pages
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7N60
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
VDS=480V, ID=7.4A, VGS=10 V
(Note 1, 2)
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0V, IS = 7.4 A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
tRR
VGS = 0V, IS = 7.4 A,
Reverse Recovery Charge
QRR
dIF / dt = 100A/μs (Note 1)
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
29 38 nC
7
nC
14.5
nC
1.4 V
7.4 A
29.6 A
320
ns
2.4
μC
CLASSIFICATION OF RDS(ON)
RANK
VALUE
-
1.0Ω
F
1.2Ω
M
1.2Ω
Q
1.2Ω
R
1.0Ω
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-076,Ja
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