MT48LC8M16A2B4-75 View Datasheet(PDF) - Micron Technology

Part Name

Description

MFG CO.

MT48LC8M16A2B4-75

Automotive SDR SDRAM

Micron Technology 

128Mb: x4, x8, x16 Automotive SDRAM

Electrical Specifications – AC Operating Conditions

Electrical Specifications – AC Operating Conditions

Table 12: Electrical Characteristics and Recommended AC Operating Conditions

Notes 1–5 apply to all parameters and conditions

-6A

-7E

-75

Parameter

Symbol Min Max Min Max Min Max Unit Notes

Access time from CLK

(positive edge)

CL = 3 tAC(3)

–

5.4

–

5.4

–

5.4

ns

7

CL = 2 tAC(2)

–

7.56

–

5.4

–

6

ns

7

CL = 1 tAC(1)

–

176

–

–

–

–

ns

7

Address hold time

tAH

0.8

–

0.8

–

0.8

–

ns

Address setup time

tAS

1.5

–

1.5

–

1.5

–

ns

CLK high-level width

tCH

2.5

–

2.5

–

2.5

–

ns

CLK low-level width

tCL

2.5

–

2.5

–

2.5

–

ns

Clock cycle time

CL = 3 tCK(3)

6

–

7

–

7.5

–

ns

8

CL = 2 tCK(2)

106

–

7.5

–

10

–

ns

8

CL = 1 tCK(1)

206

–

–

–

–

–

ns

8

CKE hold time

tCKH

0.8

–

0.8

–

0.8

–

ns

CKE setup time

tCKS

1.5

–

1.5

–

1.5

–

ns

CS#, RAS#, CAS#, WE#, DQM hold time tCMH

0.8

–

0.8

–

0.8

–

ns

CS#, RAS#, CAS#, WE#, DQM setup time tCMS

1.5

–

1.5

–

1.5

–

ns

Data-in hold time

tDH

0.8

–

0.8

–

0.8

–

ns

Data-in setup time

tDS

1.5

–

1.5

–

1.5

–

ns

Data-out High-Z time

CL = 3 tHZ(3)

–

5.4

–

5.4

–

5.4

ns

9

CL = 2 tHZ(2)

–

7.56

–

5.4

–

6

ns

9

CL = 1 tHZ(1)

–

176

–

–

–

–

ns

9

Data-out Low-Z time

tLZ

1

–

1

–

1

–

ns

Data-out hold time (load)

tOH

3

–

3

–

3

–

ns

Data-out hold time (no load)

tOHn

1.8

–

1.8

–

1.8

–

ns 10

ACTIVE-to-PRECHARGE command

tRAS

42 120,000 37 120,000 44 120,000 ns

ACTIVE-to-ACTIVE command period

tRC

60

–

60

–

66

–

ns 11

ACTIVE-to-READ or WRITE delay

tRCD

18

–

15

–

20

–

ns

Refresh period (4096 rows)

tREF

–

64

–

64

–

64

ms

Refresh period – automotive (4096

rows)

tREFAT

–

16

–

16

–

16

ms

AUTO REFRESH period

tRFC

60

–

66

–

66

–

ns

PRECHARGE command period

tRP

18

–

15

–

20

–

ns

ACTIVE bank a to ACTIVE bank b com-

tRRD

12

–

14

–

15

–

ns

mand

Transition time

tT

0.3

1.2

0.3

1.2

0.3

1.2

ns 12

WRITE recovery time

tWR 1 CLK + – 1 CLK + – 1 CLK + –

6ns

7ns

7.5ns

–

13

12

–

14

–

15

–

ns 14

PDF: 09005aef84baf515

128mb_x4x8x16_ait-aat_sdram.pdf - Rev. C 1/14 EN

26

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© 1999 Micron Technology, Inc. All rights reserved.

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