STD9N60M2 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STD9N60M2

N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFET in DPAK, TO-220 and IPAK packages

STMicroelectronics 

STD9N60M2, STP9N60M2,

STU9N60M2

N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg

Power MOSFET in DPAK, TO-220 and IPAK packages

Datasheet - production data

TAB

3

1

DPAK

TAB

TAB

3

2

1

TO-220

3

2

1

IPAK

Features

Order codes

VDS @

TJmax

RDS(on)

max

ID

STD9N60M2

STP9N60M2

STU9N60M2

650 V 0.78 Ω 5.5 A

• Extremely low gate charge

• Lower RDS(on) x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Figure 1. Internal schematic diagram

, TAB

Applications

• Switching applications

Description

These devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Qg. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

AM15572v1

Order codes

STD9N60M2

STP9N60M2

STU9N60M2

Table 1. Device summary

Marking

Package

9N60M2

DPAK

TO-220

IPAK

Packaging

Tape and reel

Tube

Tube

May 2013

This is information on a product in full production.

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